schottky barrier diode RBQ30NS65A l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)cathode common dual type.(lpds) 2)low i r. l construction l structure silicon epitaxial planer l taping dimensions (unit : mm) symbol unit v rm v v r v io a i fsm a tj c tstg c symbol min. typ. max. unit v f - - 0.69 v i f =15a i r - - 0.45 ma v r =65v forward current surge peak (60hz ? 1cyc) (*2) reverse current (*1) 60hz half sin wave, 1/2 io per diode. parameter (*2) 60hz half sin wave, one cycle, non-repetitive at tj=25 c. l electrical characteristics (tj=25 c) forward voltage conditions average rectified forward current (*1) 30 reverse voltage (repetitive) 65 reverse voltage (dc) 65 parameter limits l absolute maximum ratings (tc=25 ? c) - 40 to + 150 storage temperature 150 junction temperature 100 rohm : lpds jeita : to263s manufacture year, week and day bq30ns 65a 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RBQ30NS65A 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 ta=125 c ta=25 c ta=150 c ta= - 25 c ta=75 c 0 20 40 60 80 100 ta=25 c v r =65v n=30pcs ave:40.08 m a 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 ta= - 25 c ta=25 c ta=125 c ta=150 c ta=75 c 1 10 100 1000 10000 0 5 10 15 20 25 30 f=1mhz 600 610 620 630 640 650 660 670 680 690 700 ave:645.4mv ta=25 c i f =15a n=30pcs 1200 1210 1220 1230 1240 1250 1260 1270 1280 1290 1300 ave:1225.8pf ta=25 c f=1mhz v r =0v n=10pcs forward voltage v f (mv) v f - i f characteristics forward current:i f (a) reverse voltage v r (v) v r - i r characteristics reverse current:i r ( m a) capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics v f dispersion map forward voltage:v f (mv) capacitance between terminals:ct(pf) ct dispersion map reverse current:i r ( m a) i r dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ30NS65A 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) 0 5 10 15 20 25 30 ave:16.1ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 50 100 150 200 250 300 350 400 450 500 1 10 100 0 50 100 150 200 250 300 350 400 450 500 1 10 100 t i fsm 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 dc d=1/2 sin( q 180) 0 50 100 150 200 250 300 350 400 450 500 8.3ms 1cyc ave:271.0a i fsm i fsm dispersion map peak surge forward current:i fsm (a) trr dispersion map reverse recovery time:trr(ns) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current:i fsm (a) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 8.3ms i fsm 1cyc 8.3ms time:t(ms) i fsm - t characteristics 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ30NS65A 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 sin( q 180) dc d=1/2 0 10 20 30 40 50 60 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 ave:5.9kv no break at 30kv c=100pf r=1.5k w c=200pf r=0 w reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) electrostatic discharge test esd(kv) esd dispersion map v r io t tj=150 c d=t/t t v r =30v 0a 0v 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 sin( = 180) dc d=1/2 v r io t tj=150 d=t/t v r =30v 0a 0v t 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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